Methods of forming patterned reticles

ABSTRACT

The invention includes methods of forming patterned reticles. Design features can be introduced into a layout for a reticle prior to optical proximity correction, and then removed prior to taping a pattern onto the reticle. Design features can alternatively, or additionally, be introduced after optical proximity correction and asymmetrically relative to one or more parts of a reticle pattern. The introduced features can subsequently be taped to the reticle as part of the formation of the patterned reticle.

TECHNICAL FIELD

The invention pertains to methods of forming reticles.

BACKGROUND OF THE INVENTION

Photolithography is commonly used during formation of integratedcircuits on semiconductor wafers. More specifically, a form of radiantenergy (such as, for example, ultraviolet light) is passed through aradiation patterning tool and onto a radiation-sensitive material (suchas, for example, photoresist) associated with a semiconductor wafer. Theradiation patterning tool can be referred to as a photomask or areticle. The term “photomask” traditionally is understood to refer tomasks which define a pattern for an entirety of a wafer, and the term“reticle” is traditionally understood to refer to a patterning toolwhich defines a pattern for only a portion of a wafer. However, theterms “photomask” (or more generally “mask”) and “reticle” arefrequently used interchangeably in modern parlance, so that either termcan refer to a radiation patterning tool that encompasses either aportion or an entirety of a wafer. For purposes of interpreting thisdisclosure and the claims that follow, the term “reticle” is utilizedgenerically to refer to any radiation patterning tool, inclusive oftools which define a pattern for only a portion of a wafer and toolswhich define a pattern for an entirety of a wafer.

Reticles contain light restrictive regions (for example, totally opaqueor attenuated/half-toned regions) and light transmissive regions (forexample, totally transparent regions) formed in a desired pattern. Agrating pattern, for example, can be used to define parallel-spacedconductive lines on a semiconductor wafer. As discussed previously, thewafer is provided with a layer of radiation-sensitive material (such as,for example, photosensitive resist material, which is commonly referredto as photoresist). Radiation passes through the reticle onto the layerof photoresist and transfers a pattern defined by the radiationpatterning tool onto the photoresist. The photoresist is then developedto remove either the exposed portions of photoresist for a positivephotoresist or the unexposed portions of the photoresist for a negativephotoresist. The remaining patterned photoresist can then be used as amask on the wafer during a subsequent semiconductor fabrication step,such as, for example, ion implantation or etching relative to materialsin the wafer proximate the photoresist.

Advances in semiconductor integrated circuit performance have typicallybeen accompanied by a simultaneous decrease in integrated circuit devicedimensions and a decrease in the dimensions of conductor elements whichconnect those integrated circuit devices. The demand for ever smallerintegrated circuit devices brings with it demands for ever-decreasingdimensions of structural elements, and ever-increasing requirements forprecision and accuracy in radiation patterning with reticles.

FIG. 1 shows a flow chart illustrating a typical process utilized forcreating a pattern for a reticle. At an initial step 10, a preliminarydesign is created for the reticle and verified. The creation of thedesign begins with provision of a desired pattern which is ultimately tobe formed in photoresist. Subsequently, the design is created for thereticle which will roughly produce the desired pattern on photoresistfrom radiation passed through the reticle. The design is rough in thatit largely ignores effects of interference on radiation passing throughthe reticle.

After the design is believed to be complete, (i.e., once it is believedthat all patterned features which are to be patterned in photoresistwith the reticle are represented in the design) the design is submittedto a verification process to confirm that the design is complete.

After the design has been created and verified, it is subjected tooptical proximity correction (shown as step 20 in FIG. 1). The opticalproximity correction takes into account various interference factorsthat influence radiation passing through a reticle (i.e., constructiveand destructive interference effects that result from passing radiationthrough patterns having dimensions on the same order as the wavelengthof the radiation, or smaller). The optical proximity correction can beutilized to correct all parts of the design, or only some parts of thedesign. In other words, the optical proximity correction can be appliedto only some portions of a design, while other portions are not opticalproximity corrected. Typically there will be a verification stepfollowing the optical proximity correction.

The steps of generating a design from a desired pattern which is to beprovided in photoresist, verification of the design, optical proximitycorrection, and verification of the correction, are typicallyaccomplished primarily through the use of software. A suitable softwarepackage which can be utilized for one or more of the steps isHERCULES™/TAURUS OPC™, which is available from Avant! Corporation™.

The optical proximity correction creates a dataset which is subsequentlytranslated into a pattern formed on a reticle. The process oftranslating the dataset into a pattern on the reticle is frequentlyreferred to as taping the pattern onto the reticle. In such context, theterms “tape” and “tape out” refer to a process of transferring thedataset to appropriate hardware which writes a pattern represented bythe dataset onto the reticle. The process of writing onto the reticlecan be accomplished by, for example, laser writing and/or electron-beamwriting methodologies. The step of taping the pattern onto the reticleis shown in FIG. 1 as step 30.

After the pattern has been formed on the reticle, the reticle can beutilized for patterning radiation in semiconductor fabricationprocesses. FIG. 2 illustrates an exemplary apparatus 40 in which areticle is utilized for patterning radiation. Apparatus 40 comprises alamp 42 which generates radiation 44. Apparatus 40 further comprises areticle 46 through which radiation 44 is passed. A semiconductorsubstrate 48 having a radiation-sensitive material 50 thereover isillustrated associated with apparatus 40. The radiation passing throughreticle 46 impacts radiation-sensitive material 50 to form a patternwithin the radiation-sensitive material. The process of forming apattern in a radiation-sensitive material with a reticle can be referredto as a printing operation. For purposes of interpreting this disclosureand the claims that follow, the term “taping” will refer to a process offorming a pattern on a reticle, and the term “printing” will refer to aprocess of forming a pattern on a radiation-sensitive material utilizingthe reticle.

Reticle 46 typically comprises an opaque material (such as chrome) overa transparent material (such as a glass). Reticle 46 has a front sidewhere the pattern is formed as features (or windows) extending throughthe opaque material, and has a back side in opposing relation to thefront side. The shown reticle has two opposing sides 45 and 47, and inpractice one of the two sides would be the front side (typically side45) and the other would be the back side. In some applications featurescan be printed on both the front side and back side of the reticle.

As discussed above, reticle 46 will typically have a pattern withdimensions on the order of the wavelength of the radiation passingthrough the reticle, or smaller. Accordingly, various interferenceeffects can occur as the radiation passes through the reticle so thatthe radiation exiting the reticle will transfer a pattern somewhatdifferent than the pattern of the reticle. Such is illustrateddiagrammatically in FIG. 3. Specifically, FIG. 3 illustrates anexemplary pattern 60, which can be desired to be formed in aradiation-sensitive material, and illustrates an approximation of apattern 70 which would be formed in a reticle to generate the pattern60. Pattern 70 is referred to as an approximation because the pattern isa qualitative representation of the type of pattern utilized in reticlefor generating pattern 60, rather than a quantitative representation.

The FIG. 1 process can, for example, start with a pattern identical topattern 60 being provided at the design step (10) of the reticlefabrication process, and such design would then be converted to theshape 70 during the optical proximity correction (20) step.

FIGS. 4 and 5 illustrate exemplary designs which can be desired to beformed in radiation-sensitive materials, and illustrate the reticlepatterns commonly utilized to create such designs. Referring initiallyto FIG. 4, a radiation-sensitive material 80 is illustrated in top view,and a design is formed within the material comprising a plurality offeatures 82. The shown features 82 are circular in patterned dimension,and can be utilized, for example, in forming contact openings.

Features 82 can be desired to be identical in printed dimension relativeto one another. The printed dimension of features 82 corresponds to theshape printed on a surface of radiation-sensitive material 80 during aphotolithographic process (i.e., to a pattern of radiation formed on thesurface of the radiation-sensitive material as the radiation passesthrough a reticle), as opposed to a depth of the features. The printeddimension is a circumference of the shown circular features.

FIG. 4 also illustrates a reticle substrate 84 comprising a patternassociated therewith which includes a plurality of identical elements86. The elements 86 are in a one-to-one correspondence with the features82 formed in the radiation-sensitive material. Further, each of elements86 is approximately square in shape. In operation, radiation is passedthrough reticle 84 to form the pattern of printed images 82 onradiation-sensitive material 80. Regions 86 of the reticle can be eithermore transparent to radiation than surrounding regions of the reticle,or can be less transparent, depending on whether the radiation-sensitivematerial corresponds to a positive or negative material. If elements 86are more transmissive to radiation than surrounding regions, theelements 86 can effectively be windows which allow radiation to passthrough those specific regions of the reticle.)

Referring to FIG. 5, a radiation-sensitive material 90 is illustrated intop view, together with a pattern comprising features 92 and 94 that isdesired to be formed in the material. Feature 92 extends along a length93, and feature 94 extends along a length 95. The lengths 93 and 95 arenot parallel to one another in the shown embodiment, and in fact aresubstantially orthogonal to one another. Accordingly, features 92 and 94can be considered to extend vertically and horizontally, respectively,relative to one another.

Features 92 and 94 can be desired to be identical in printed dimensionrelative to one another. The printed dimensions of features 92 and 94correspond to the shapes printed on a surface of radiation-sensitivematerial 90 during a photolithographic process of forming features 92and 94, as opposed to a depth of the features. The printed dimensions ofthe shown oblong features include length and width dimensions.

A reticle 96 is shown comprising a pair of elements 98 and 100. Reticle96 can be utilized for generating the pattern associated withradiation-sensitive material 90. Specifically, the rectangular-shapedelements 98 and 100 can be utilized for forming the elongated shapes 92and 94 as radiation is passed through reticle 96 and patterned withregions 98 and 100.

Various problems can occur in utilizing reticles to pattern radiationduring a printing process. Such problems can include differingattributes of a radiation-sensitive material in different regions wherefeatures of a pattern are to be formed, and/or aberrations associatedwith radiation utilized during a printing process. An exemplaryaberration associated with radiation can include astigmatism. In theexemplary processing described with reference to FIG. 5, it is desiredthat feature 92 and feature 94 be identical to one another (except thatthe features extend in different directions). However, if astigmatismoccurs during the printing of features 92 and 94, such can causedifferent levels of exposure of the radiation-sensitive materialassociated with one feature relative to the exposure of the materialassociated with the other feature, which can cause the resultingfeatures to be non-identical relative to one another.

FIG. 6 illustrates another aberration that can be associated with theradiation. Specifically, FIG. 6 illustrates a cross-sectional view of afragment 105 of semiconductor construction during a printing process.The construction comprises a semiconductor substrate 110 having a layer112 formed thereover.

In describing the various applications of the invention which follow, itis useful to utilize the term “substrate” to refer to various supportingstructures, and combinations of supporting structures. Accordingly, theterms “semiconductive substrate” and “semiconductor substrate” aredefined to mean any construction comprising semiconductive material,including, but not limited to, bulk semiconductive materials such as asemiconductive wafer (either alone or in assemblies comprising othermaterials thereon), and semiconductive material layers (either alone orin assemblies comprising other materials). The term “substrate” refersto any supporting structure, including, but not limited to, thesemiconductive substrates described above.

Layer 112 covers only a portion of the substrate. A radiation-sensitivematerial 114 extends over substrate 110 and layer 112. Theradiation-sensitive material has a varying topography, and specificallyhas a lower surface over regions of substrate 110 that are not coveredby layer 112, and a higher surface over the regions that are covered bylayer 112.

Regions 116 and 118 are provided to diagrammatically illustrate areaswhere features are to be printed into material 114. The dashed lines ofregions 116 and 118 are to be understood as locations relative tomaterial 114, rather than as structures extending upwardly from material114. The feature printed at location 116 will ideally be identical tothe feature printed at location 118. However, such typically doesn'toccur in practice.

Region 116 is associated with a lower portion of material 114 and region118 is associated with a higher portion of the material. Radiationpassing through the reticle should be focused at an upper surface of thematerial 114 that is to be patterned. However, since the upper surfaceof material 114 varies in height, the radiation cannot be simultaneouslyfocused at both the location of feature 116 and the location of feature118. Accordingly, the radiation is focused at an intermediate location,with a focal point of the radiation being illustrated diagrammaticallyby dashed line 120. Since the radiation is focused above the location offeature 116 and below the location of feature 118, there can be an imagesize difference at the location of feature 118 relative to the locationof feature 116.

FIG. 7 illustrates various attributes that can be associated with aradiation-sensitive material. More specifically, FIG. 7 illustrates afragment 125 comprising a semiconductor substrate 130, a layer 132 overa portion of the semiconductor substrate, and a radiation-sensitivematerial 134 formed over semiconductor substrate 130 and layer 132.

Radiation-sensitive material 134 comprises a thickness 135 which issubstantially uniform over substrate 130 and layer 132, but whichincreases to a thickness 137 at a location where an elevational heightof the material 134 changes due to layer 132. The change in thickness ofmaterial 134 can be considered a change in an attribute of theradiation-sensitive material, and such change can influence formation ofa pattern within material 134.

A series of regions 136, 138, 140, 142, 144 and 146 are illustratedrelative to material 134 where patterned features are to be formedwithin the material. It is noted that regions 136, 138, 140, 142, 144and 146 are designated by dashed lines extending upwardly from region134. The dashed lines are utilized to indicate where the regions will beformed relative to material 134 and not to indicate that any structuresare extending above material 134. Each of regions 136, 138, 140, 142,144 and 146 will ideally be identical to one another when the featuresare formed to extend through material 134. However, the varying topologyof an upper surface of material 134 creates three regions (labeled as129, 131 and 133) that ideally are separately analyzed relative to oneanother. Region 131 has thicker resist than the other regions; andregions 129 and 133 are optimized at different focal elevations relativeto one another.

Since the resist is thicker under feature 140 than under the otherfeatures, the feature 140 will not be identical to the other features ifsubjected to identical processing as the other features. For instance,if feature 140 is printed to have an identical width as the otherfeatures, then the opening formed relative to feature 140 may actuallybe narrower at the base of the opening than are the openings formedrelative to the other features.

Semiconductor wafers can have numerous regions where radiation-sensitivematerial has different attributes than other regions due to, forexample, the topography of the material. Further, numerous aberrationscan be present in light utilized for printing a pattern to photoresist.Presently, various defects introduced by aberrations in radiation and/orby differing attributes in radiation-sensitive material are frequentlynot addressed during a process of forming a reticle. However, asintegrated circuit devices become smaller it becomes increasinglydesirable to compensate for problems induced through aberrations inradiation or differing attributes of radiation-sensitive material.Accordingly, it would be desirable to develop methodologies foraddressing such problems.

SUMMARY OF THE INVENTION

In one aspect, the invention encompasses a method of forming a patternedreticle in which design features are introduced into a layout for thereticle prior to optical proximity correction, and then removed prior totaping a pattern onto the reticle.

In one aspect, the invention encompasses a method in which a designwhich is ultimately to be printed in radiation-sensitive materialcomprises first and second features which are at different locations butotherwise desired to be identical in printed dimension to one another. Afirst set of design rules is utilized to develop a first approximationof a plan of a pattern for the reticle utilized to produce the design.The first approximation comprises first and second patternscorresponding to regions of the patterned reticle which are to beutilized for forming the first and second features, respectively, of thedesign. The first and second patterns are identical to one another.After the first set of design rules is utilized, the first pattern isaltered relative to the second pattern. After the first pattern isaltered, optical proximity correction is utilized to form a plan datasetfor the reticle. The plan dataset is utilized either directly or withmodification to tape an arrangement of relatively opaque regions andrelatively transparent regions onto a reticle to form the patternedreticle. The patterned reticle ultimately produces the first and secondfeatures of the design more similar to one another than it would ifidentical first and second patterns had been utilized during the opticalproximity correction.

In one aspect, the invention encompasses a method in which a designwhich is ultimately to be printed in radiation-sensitive material has atleast two features which are at different locations but otherwisedesired to be identical to one another. A set of design rules isutilized to develop an approximation of a patterned layout for apatterned reticle which will be utilized to produce the design. Theapproximation comprises a first set of layout elements corresponding tothe at least two features. The first set of layout elements aresubstantially identical to one another. Optical proximity correction isperformed on the first approximation of the patterned layout to form asecond approximation of the patterned layout. The second approximationcomprises a second set of layout elements which are derived from thefirst set of layout elements through the optical proximity correction.The layout elements within the second set are substantially identical toone another. Additional layout elements are added to the secondapproximation to form an adjusted second approximation of the patternedlayout. The additional layout elements are asymmetric relative to the atleast two features so that the layout elements corresponding to the atleast two features within the adjusted proximation are not substantiallyidentical to one another. The adjusted second approximation is utilizedto tape a pattern onto a reticle to form the patterned reticle.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a flow chart diagram of a prior art method of forming apatterned reticle.

FIG. 2 is a diagrammatic, cross-sectional view of a prior art apparatusutilized in printing a pattern to a radiation-sensitive materialutilizing a reticle.

FIG. 3 is a diagrammatic view of a desired pattern and a reticle featureutilized for producing the pattern, in accordance with prior artmethodologies.

FIG. 4 is a top view of a prior art pattern in a radiation-sensitivematerial, together with a top view of a prior art reticle which can beutilized for forming the pattern.

FIG. 5 is a top view of a prior art pattern in a radiation-sensitivematerial, together with a top view of a prior art reticle which can beutilized for forming the pattern.

FIG. 6 is a diagrammatic, cross-sectional view of a fragment of asemiconductor construction illustrating a prior art printing process.

FIG. 7 is a diagrammatic, cross-sectional view of a fragment of asemiconductor construction illustrating another prior art printingprocess.

FIG. 8 is a flow chart diagram of an exemplary method of the presentinvention.

FIG. 9 is a diagrammatic view of a dataset that is utilized at aninitial stage of forming a reticle in accordance with the method of FIG.8. The dataset of FIG. 9 corresponds to an image that is desired to beprinted in a radiation-sensitive material, and is illustrated as animage in a radiation-sensitive material.

FIG. 10 is a diagrammatic view of a dataset utilized for forming areticle in accordance with the method of FIG. 8, and generated from thedataset of FIG. 9. The dataset of FIG. 10 corresponds to a firstapproximation of a pattern that would be formed in a reticle forproducing the FIG. 9 dataset, and is illustrated as a pattern formed ina reticle.

FIG. 11 is a diagrammatic view of a dataset utilized for forming areticle in accordance with the method of FIG. 8, and comprises amodification of the dataset of FIG. 10. The dataset of FIG. 11corresponds to an approximation of a pattern that would be formed in areticle for producing the FIG. 9 dataset, and is illustrated as apattern formed in a reticle.

FIG. 12 is a diagrammatic view of a dataset utilized for forming areticle in accordance with the method of FIG. 8, and comprises anoptical proximity corrected dataset of FIG. 11. The dataset of FIG. 12corresponds to an approximation of a pattern that would be formed in areticle for producing the FIG. 9 dataset, and is illustrated as apattern formed in a reticle.

FIG. 13 is a diagrammatic top view of a patterned reticle formedutilizing the dataset of FIG. 12 in accordance with an exemplary aspectof the invention.

FIG. 14 is a diagrammatic top view of a patterned reticle formedutilizing the dataset of FIG. 12 in accordance with an exemplary aspectof the invention which is different than the aspect described withreference to FIG. 13.

FIG. 15 is a flow-chart diagram of an exemplary method of the presentinvention.

FIG. 16 is a diagrammatic top view of an exemplary reticle formed inaccordance with methodology of the present invention.

FIG. 17 is a diagrammatic top view of another exemplary reticle formedin accordance with methodology of the present invention.

FIG. 18 is a diagrammatic top view of yet another exemplary reticleformed in accordance with methodology of the present invention.

FIG. 19 is a diagrammatic top view of yet another exemplary reticleformed in accordance with methodology of the present invention.

FIG. 20 is a flow chart diagram of an exemplary method of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

One aspect of the invention is described with reference to FIGS. 8-13.FIG. 8 shows a flow chart diagram 200 of an exemplary method of thepresent invention, and FIGS. 9-13 diagrammatically illustrate variousprocessing stages of the FIG. 8 method for forming a patterned reticle.

At an initial stage 210 of the FIG. 8 method, a design is provided whichis ultimately to be printed in a radiation-sensitive material utilizingradiation passing through the patterned reticle. FIG. 9 diagrammaticallyillustrates a dataset corresponding to a desired design (in other words,FIG. 9 corresponds to a desired end result). The design is shown withina radiation-sensitive material 250 for purposes of the illustration. Thedesign includes a plurality of features 252, 254, 256, 258, 260, 262,264 and 266 which are at different locations, but otherwise identical inprinted dimension relative to one another. The shown features arecircular regions patterned within radiation-sensitive material 250. Itis noted that the material 250 of FIG. 9 would typically not actuallyexist. Rather, FIG. 9 corresponds to a model of a pattern which isultimately desired to be formed from a patterned reticle created throughthe FIG. 8 method. In other words, the first step in forming a patternedreticle is to form a dataset model of the printed image which is desiredto ultimately to be formed with the reticle.

It can be useful in describing the process of forming a reticle toidentify two of the desired printed features as being first and secondfeatures, and to then compare differences in processing that occurrelative to the features. For such purpose, feature 252 will beidentified as a first desired printed feature, and feature 254 will beidentified as a second desired printed feature.

It is noted that the layout of FIG. 9 is but one example of a desiredprinted image, and there are numerous other types of printed imageswhich will have first and second features at different locationsrelative to one another but which are otherwise identical in printeddimension to one another. For instance, the prior art pattern shown inFIG. 5 comprises a pair of features 92 and 94 which are at differentlocations relative to one another, but which are otherwise desired to beidentical in printed dimension.

At step 212 of the FIG. 8 method, design rules are utilized to develop afirst approximation of a plan for the patterned reticle. The firstapproximation is then verified.

FIG. 10 shows a structure 270 corresponding to a reticle 272 having apattern of features 274, 276, 278, 280, 282, 284, 286 and 288 formedtherein. Features 274, 276, 278, 280, 282, 284, 286 and 288 correspondto patterns formed utilizing the first set of design rules. Although thefeatures are shown as circles, it is to be understood that the featurescan have other shapes, such as, for example, polygonal shapes. Each ofpatterns 274, 276, 278, 280, 282, 284, 286 and 288 is identical to theother, and each of the patterns can be considered to correspondeffectively to a window identical in dimension to the features 252, 254,256, 258, 260, 262, 264, 266 desired to be formed in theradiation-sensitive material of FIG. 9. The structure 270 of FIG. 10would not actually exist in practice, but rather is a model of apatterned reticle generated utilizing the first set of design rules. Oneaspect of the first set of design rules is that it typically ignoresinterference and diffraction effects on radiation passing through thereticle, and thus each of the patterns formed in structure 270 can be anexact complement of a desired feature which is to be formed with thepattern.

The processing stage 212 of the FIG. 8 method can correspond identicallyto the processing stage 10 of the prior art method of FIG. 1, and can beaccomplished utilizing suitable software. The dataset generated from theprocessing stage 212 can be considered a first approximation to apattern that is ultimately to be formed in the patterned reticle.

Referring again to FIG. 8, a step 214 comprises adding at least oneelement to modify the first approximation from step 212. The addition ofthe at least one element in step 214 alters a design layout that hadbeen developed utilizing the design rules at step 212, and can beconsidered an introduction of additional design features into the designlayout generated at step 212.

FIG. 11 diagrammatically illustrates the addition of an element 290relative to the patterns 274, 276, 278, 280, 282, 284, 286 and 288 ofmathematical model 270. Element 290 is associated with pattern 274, andnot with the other patterns 276, 278, 280, 282, 284, 286 and 288.Further, element 290 is preferably close enough to pattern 274 so thatit affects the image formed by radiation passing through pattern 274.Such effect can result from interference of radiation passing throughimage 290 on radiation passing through pattern 274. Again, it is notedthat structure 270 is a model, and accordingly element 290 and pattern274 do not actually exist as a real structure, but instead exist only inthe software utilized to ultimately develop a pattern which is to bewritten on a reticle. In the shown application of the invention, element290 can be considered to be provided asymmetrically relative to patterns274 and 276 as the element is provided proximate to pattern 274 and notpattern 276. Element 290 could also be provided symmetrically relativeto the patterns.

In applications in which element 290 does not actually exist,substantial freedom can be utilized in mathematically providing element290 within the structure 270. Specifically, element 290 can be modeledas having identical optical properties to pattern 274, or can be modeledto have different optical properties. In describing the possibledifferences between element 290 and pattern 274, it can be useful todescribe pattern 274 as corresponding to a first pattern generated bydesign rules, and to describe the combination of pattern 274 and element290 as corresponding to an alteration of the first pattern (or as analtered first pattern). The altered first pattern can then be consideredto comprise an initial portion corresponding to 274 and an added elementcorresponding to the element 290. Element 290 can be laid separate fromthe real element, or abutting it, or overlapping it (in other words,superimposed over at least a portion of the real element). It is notedthat although only one additional element is shown being added in theprocessing of FIG. 11, the invention encompasses other embodimentswherein multiple additional elements are added. Such multiple additionalelements can be associated with a single one of the patterns 274, 276,278, 280, 282, 284, 286 and 288; or can be associated with a pluralityof such patterns.

Element 290 and pattern 274 can both be modeled as being transparent toradiation which will ultimately be utilized for printing aradiation-sensitive material (i.e., can be modeled as being not entirelyopaque to the radiation). The relative transmission (transparency) ofelement 290 and pattern 274 can be treated as being identical, or can betreated as being different. Further, element 290 can be treated asinducing a different polarization to radiation passing therethroughrelative to pattern 274. As another example, element 290 can be treatedas inducing a different type of illumination to radiation passingtherethrough relative to pattern 274. Such different illumination cancorrespond to, for example, quadrupole illumination or annularillumination. As another example, portion 290 can be treated as creatinga different phase in radiation passing therethrough relative to pattern274. The various mathematically modeled differences possible betweenelement 290 and pattern 274 can be used alternatively to one another, orcan, where appropriate, be combined. In particular applications,Zernicke coefficients can be utilized in the mathematical formulation ofelement 290. The examples provided above of properties of element 290that can be varied are but a few of many possibilities. The variousproperties of element 290 that can be varied include, but are notlimited to, physical dimensions (for example, size and form); opticalparameters (for example, transmission, attenuation, phase shift,polarization [the light modeled to be transmitted through the element orattenuated by it can be modeled to be dependent on polarization]),wavelength dependence (the element can be modeled as a filter),aberrations, Zernicke numbers, defocus, numerical aperture, and spatialcoherence/illumination type (for example, conventional, annular,quadrupole, dipole, or arbitrary source shape). The design features(i.e., element 290) can be modeled to form patterns in the reticle thatvary non-linearly in one or more parameters (such as, for example,transmission and/or phase shift of light passing therethrough) relativeto changes in one or both of the dose and intensity of the light.Various properties of the design features can be modeled as being afunction of one or more of the three principal directions (i.e., thethree principal axes x, y and z that are mutually orthogonal to oneanother) within the design features.

If element 290 is not printed in the reticle, it can be referred to as apseudo-feature. Pseudo-features can be modeled to vary with location,for example due to expected differences in a topography of a substrate.But even if the topography is flat, multiple pseudo-features can beutilized which vary relative to one another to assist with, for example,field-dependent issues, such as aberrations, variations in exposureintensity and/or variations in exposure position. If three-dimensionalmodeling is utilized, one or more of the pseudo-features can be in thethird (“z”) direction. Another variation that can be incorporated intothe pseudo-features is the side of the mask that the features aremodeled to be on. The pseudo-features can be modeled to be on the sameside of the photomask as the real features, and/or can be modeled to beon an opposite side of the mask (in other words, if the real features ona side of the mask defined as a front side, the pseudo-features can bemodeled as being on a back side of the mask). Additionally, oralternatively, one or more of the pseudo-features can be modeled asbeing along neither the front side nor the back side, but instead asbeing at differing locations along a Z-axis extending through thephotomask. In other words, one or more of the pseudo-features can bemodeled to be at locations physically impossible for actual tapedfeatures, such as locations elevationally above the surface of thephotomask, or locations within an interior of the photomask.

The additional elements added at the processing stages of FIG. 11 andstep 214 of FIG. 8 can be utilized to compensate for problems expectedto occur in specific locations of a printed radiation-sensitivematerial. Specifically, the elements can be utilized to compensate forregions of radiation-sensitive material having different attributes thanothers (exemplary different attributes are discussed above withreference to FIG. 7). If each of the first and second features 252 and254 of the FIG. 9 printed pattern are to be identical to one another,but if the radiation-sensitive material 250 is expected to have adifferent attribute in the region of the first feature than in thesecond feature, then it can be desired to have the pattern 274 bedifferent than the pattern 276. It will be difficult to compensate forall of the potentially different attributes of radiation-sensitivematerial at the processing stage where design rules are utilized todevelop a first approximation of a plan for a patterned reticle (thefirst step of stage 212 of FIG. 8), in that all of the modificationswould then be subject to a verification process. Numerous complexitieswould be introduced into a verification process if the various potentialmodifications to specific points of a pattern were introduced prior toverification. The methodology of FIG. 8 avoids introduction of suchcomplexities by introducing the modifications after the verification ofthe initial design layout.

In addition, or alternatively, to correcting for different attributes ofradiation-sensitive material, element 290 can be utilized to adjust forexpected aberrations in radiation passing through a patterned reticleduring a printing process. Accordingly, element 290 can be utilized tocorrect for, and in particular cases entirely compensate for,astigmatism and/or varying focal points occurring during a printingprocess. The problem of varying focal points was described previouslywith reference to FIG. 6.

Referring again to FIG. 8, a step 216 applies an optical proximitycorrection to the modified first approximation that resulted from step214.

FIG. 12 illustrates mathematical model 270 after the optical proximitycorrection. The shapes of patterns 274, 276, 278, 280, 282, 284, 286 and288 are changed to account for interference effects on radiation passingthrough the patterns. Further, the shape of element 290 has beenaltered, and element 290 has influenced the shape of pattern 274relative to the other patterns so that pattern 274 now has a differentshape than the other patterns. In the shown example, shape 274 isstretched into a rectangle. As discussed above, various differencesbetween element 290 and pattern 274 can be modeled (with exemplarydifferences being different effects on the phase, polarization,illumination, attenuation and/or transmission of radiation). The opticalproximity correction can be appropriately modified to treat element 290differently than pattern 274 in accommodating the various differenteffects on radiation that can be modeled into element 290.

Although element 290 is shown separate from shape 274 after the opticalproximity correction, it is to be understood that element 290 can alsomerge into pattern 274 to form a resulting pattern that is a combinationof optically corrected pattern 274 and element 290. Also, althoughelement 290 is shown to be altered by the optical proximity correction,it is to be understood that in other embodiments (not shown), theoptical proximity correction could be utilized to alter one or more ofpatterns 274, 276, 278, 280, 282, 284, 286 and 288, while not alteringelement 290. In other words, the invention includes embodiments in whichelement 290 is not subjected to optical proximity correction even thoughvarious patterns are subjected to the optical proximity correction afterprovision of element 290.

The optical proximity correction forms a dataset of information. Thedataset includes the portions of the modified first approximation thathave been optical proximity corrected, as well as any portions of themodified first approximation that have not been optical proximitycorrected during the correction of the other portions. FIG. 12 is adiagrammatic representation of the dataset. It should be understood thatFIG. 12 is a representation of information that generally only existsmathematically during methodology of the present invention. The datasetresulting from the optical proximity correction can be referred to as aplan dataset, in that it corresponds to a plan that is ultimately to beutilized for taping a pattern onto a reticle. Alternatively, the datasetresulting from the optical proximity correction can be referred to as apattern layout dataset, or as a second approximation of a pattern layoutthat is ultimately to be formed on a patterned reticle.

Referring again to FIG. 8, the dataset resulting from the opticalproximity correction is utilized to tape a pattern onto a reticle. Thetaping can be accomplished utilizing, for example, e-beam or lasertechnologies as discussed above with reference to the prior artprocessing of FIG. 1. An optional step 218 (indicated with a dashedarrow to emphasize that the step is optional) is to remove the elementsthat had been provided at step 214 prior to the taping. If the elementshave non-valid physical properties, they should be removed at thisstage.

FIGS. 13 and 14 illustrate reticles 300 and 330 resulting from thetaping of an optical proximity corrected dataset without removal of theadditional elements utilized to modify a first approximation, and withremoval of such additional elements, respectively. The reticles of FIGS.13 and 14 comprise patterns of relatively transparent regions andrelatively opaque regions. The terms “relatively transparent” and“relatively opaque” indicate that the regions are not necessarilyentirely transparent or opaque, but rather are opaque and transparentrelative to one another. Also, the phase of the different regions can bethe same, or have different values. For instance the phase of radiationpassing through an element can be modeled to be shifted 90° or 180° (orany other possible variation) relative to background and/or relative toone or more features and/or relative to one or more other elements.

Reticle 300 comprises a substrate 301 having patterns 302, 304, 306,308, 310, 312, 314 and 316 extending therein. The patterns can berelatively transparent to a remainder of substrate 301, or vice versa.Patterns 302, 304, 306, 308, 310, 312, 314 and 316 correspond to thepatterns 274, 276, 278, 280, 282, 284, 286 and 288, respectively, in themathematical dataset of FIG. 12. Reticle 300 also comprises a pattern318 corresponding to the element 290 of the mathematical dataset 270 ofFIG. 12. Reticle 300 is an actual reticle which can ultimately beutilized to form a printed pattern corresponding to the desired patternof FIG. 9.

The reticle 330 of FIG. 14 comprises a substrate 331 having patterns332, 334, 336, 338, 340, 342, 344 and 346 extending therein. Thepatterns 332, 334, 336, 338, 340, 342, 344 and 346 correspond to thepatterns 274, 276, 278, 280, 282, 284, 286 and 288 of the model 270 ofFIG. 12. The reticle 330 of FIG. 14 does not comprise a patterncorresponding to the element 290 of the model 270, as such element wasremoved prior to taping of a pattern onto reticle 330.

Since element 290 was utilized only for modification of a printedpattern, and is not itself incorporated into the printed pattern, theshape and characteristics of the modeled element are effectivelyunlimited. Accordingly, a wide variety of modifications can beintroduced with the element. In applications in which the element isintroduced prior to optical proximity correction, and then removed priorto taping of a pattern onto a reticle, the element can be referred to asa pseudo-feature to indicate that the element never becomes a realfeature in a taped reticle. It is noted that the element removed afterthe optical proximity correction may or may not be identical to theelement introduced prior to the optical proximity correction.Specifically, the element removed after the optical proximity correctionmay be an optical proximity corrected version of the element that hadbeen introduced prior to the correction, or may instead be identical tothe element introduced. Unless specified in the claims that follow, theelement removed from the optical proximity correction is to beunderstood to generically be either the optically corrected version ofthe element that had been introduced or the identical element that hadbeen introduced.

The combined patterns 302 and 318 of reticle 300 (FIG. 13) can togethercorrespond to a printed image forming the desired feature 252 of FIG. 9.Specifically, even though patterns 318 and 302 are separate from oneanother in the reticle, radiation passing through the patterns caninterfere to form a single printed image, (also, it is noted thatpatterns 318 could be abutting one another or superimposed in otheraspects of the invention). The combined patterns 302 and 318 of reticle300 can compensate for differing attributes in a radiation-sensitivematerial, and/or for aberrations in radiation utilized during a printingprocess. Similarly, the pattern 322 of reticle 330 (FIG. 14) cancompensate for variations in attributes of a radiation-sensitivematerial during a printing process, or for aberrations in radiationutilized during the printing process. As additional element 290 (FIG.12) utilized to form the patterns of reticles 300 (FIG. 13) and 330(FIG. 14) can be utilized to compensate for variations in attributes ofradiation-sensitive material (or other variations, such as, for example,variations in a substrate underlying the radiation-sensitive material)and/or for aberrations in radiation (or other illuminationirregularities, such as, for example, variations in dose with position),printed features formed utilizing the reticles 300 and 330 can be moresimilar to each other than they would be if the additional layoutelements had not been present during the optical proximity correction.In other words, if features printed from patterns 302 and 304 of reticle300 are desired to be identical to one another, the features canultimately be printed to be more similar to one another utilizing thereticle 300 (in which patterns 302 and 304 are modified relative to oneanother to compensate for difficulties in a printing process) than theywould be if a reticle were utilized in which patterns 302 and 304 wereidentical to one another.

Reticle 300 of FIG. 13 can be differentiated from reticle 330 of FIG. 14based on whether the plan resulting from the optical proximitycorrection 216 of FIG. 8 is utilized directly (i.e., withoutmodification) or is modified prior to taping a pattern onto a reticle.The reticle 300 of FIG. 13 results from utilizing the plan directly, andthe reticle of FIG. 14 results from modification of the plan to removethe elements that had been provided at the step 214 of FIG. 8. Othermodifications of the plan can be utilized either alternatively to theintroduction of elements prior to an optical proximity correction, oradditionally with introduction of elements prior to an optical proximitycorrection, in various aspects of the invention.

FIG. 15 illustrates a flow chart diagram 400 of an aspect of theinvention in which a plan is modified by addition of an element afteroptical proximity correction. In referring to FIG. 15 identicalnumbering will be utilized as was used above in describing FIG. 8, whereappropriate.

Flow chart 400 comprises the steps 210, 212, 216 and 220 of FIG. 8.Additionally, flow chart 400 contains a step 402 where at least oneelement is added to a dataset resulting from the optical proximitycorrection step 216. The at least one element is added before the tapingof step 220, and accordingly is taped onto a reticle as part of anarrangement of relatively opaque and relatively transparent regions,with possibly different phases. The added element from step 402influences a pattern of radiation formed by radiation passing throughthe patterned reticle. In particular aspects, the element added at step402 can adjust for aberrations in radiation passing through thepatterned reticle during a printing process, and/or for variations inthe radiation-sensitive material exposed to the radiation passingthrough the reticle during the printing process.

The dataset resulting from the optical proximity correction of step 216can be considered to define a set of layout elements which areultimately to be taped to a reticle. Accordingly, the elements added atstep 402 can be considered to be additional layout elements which arecombined with the dataset resulting from the optical proximitycorrection prior to taping a pattern onto a reticle.

The additional elements added at step 402 can be added with a definedsymmetry relative to the initially present layout elements. FIGS. 16-18illustrate various exemplary symmetries with which the additionalelements can be added to the dataset resulting from optical proximitycorrection. Referring initially to FIG. 16, a structure 410 isillustrated comprising a substrate 412 and a plurality of identicalpatterns 414, 416, 418, 420, 422 and 424. Structure 410 corresponds to amodel of a dataset resulting from optical proximity correction, and thepatterns 414, 416, 418, 420, 422 and 424 correspond to elements definedby the dataset. It is to be understood that structure 410 is adiagrammatic representation of the dataset resulting from opticalproximity correction, and is not a structure that would actually existin a form other than a mathematical representation in methodology of thepresent invention. The patterns 414, 416, 418, 420, 422 and 424 areanalogous to the patterns 86 described with reference to prior art FIG.4. The patterns are polygons and approximately square (or in particularaspects can be exactly square to within errors of measurement), andaccordingly each has four prominent sides of about equal length, (or inparticular aspects the sides can be of exact equal length relative toone another within errors of measurement). Patterns 414, 416, 418, 420,422 and 424 can be referred to as principal elements of an approximationdataset resulting from optical proximity correction. The patterns arereferred to as “principal elements” to distinguish them from elementswhich do not directly correlate with structures ultimately formed in apatterned reticle generated from the dataset.

The approximately square patterns 414, 416, 418, 420, 422 and 424 haveplanes of symmetry extending therethrough, with a pair of planes ofsymmetry associated with pattern 414 being identified with dashed lines430 and 432. A pair of additional layout elements 434 and 436 are addedproximate pattern 414. The additional layout elements are close enoughto pattern 414 so that if patterns 414, 434 and 436 are all taped onto areticle, the taped regions from patterns 434 and 436 will not generateseparate printed images but will instead influence the printed imagegenerated from the taped region corresponding to pattern 414. Regions434 and 436 are asymmetric relative to the planes of symmetry 430 and432. An advantage of utilizing asymmetric regions is that such canenable compensation for asymmetric effects on a printing process.Asymmetric effects can include, for example, asymmetric variationswithin a radiation-sensitive layer, and asymmetric aberrations within alight source (with an exemplary asymmetric variation being astigmatism).The additional layout elements 434 and 436 can be generated anddescribed utilizing any appropriate mathematical representation. Inparticular applications. Zernicke coefficients can be utilized in themathematical formulation of elements 434 and 436.

FIG. 17 illustrates a structure 450 similar to the structure 410described previously with reference to FIG. 16. Structure 450corresponds to a representation of a dataset comprising layout elementsfrom optical proximity correction step 216 of FIG. 15 in combinationwith an additional element 452. The elements resulting from the opticalproximity correction are identified as patterns 414, 416, 418, 420, 422and 424, as was done above with reference to FIG. 16. Element 414 isshown with a pair of planes of symmetry 432 and 430 relating to theelement. The element 414 is approximately square, and accordingly hasfour prominent sides of about equal length. The additional layoutelement 452 is shown provided along less than all four of the prominentsides, and in the specifically is shown provided along only one of thefour prominent sides. Element 452 is preferably close enough to pattern414 so that when taped features corresponding to pattern 414 and 452 areformed in a reticle and utilized for a printing operation, the featurecorresponding to pattern 452 does not print a separate and distinctimage but instead modifies an image printed from the featurecorresponding to pattern 414. Although the element is shown providedasymmetrically, it is to be understood that elements could also beprovided symmetrically (such as, for example, around all four sides ofthe polygonal feature).

FIG. 18 shows a structure 500 illustrating another aspect of the methodof FIG. 15. Structure 500 comprises a substrate 502 having principalpattern elements 504 and 506 extending therein. Structure 500 is arepresentation of a dataset that would exist after the optical proximitycorrection step 216 of FIG. 15, and after the additional element isadded at step 402. The dataset represented by structure 500 canultimately be sent to an appropriate apparatus for taping a reticle andthereby forming a pattern on the reticle comprising an arrangement ofrelatively transparent regions and relatively opaque regions. Theprincipal elements 504 and 506 of structure 500 are similar to theelements 98 and 100 described with reference to prior art FIG. 5.Elements 504 and 506 can be identical to one another, and can correspondto a pair of features (such as, for example, the features 92 and 94 ofprior art FIG. 5) which are desired to be printed in different locationsof a radiation-sensitive material but to be otherwise identical to oneanother. Elements 504 and 506 can be referred to as layout elementswhich correspond to the features which are ultimately to be printed.Although the two elements are shown extending along principal directionsthat are approximately orthogonal to one another, it is to be understoodthat any of the numerous other possible arrangements of the two elementscan be utilized. For instance, the two elements can extend alongprincipal directions that are approximately parallel to one another ordiagonal to one another.

Layout elements 504 and 506 are approximately rectangular, and inparticular aspects can be exactly rectangular to within errors ofmeasurement. Each of layout elements 504 and 506 has four prominentsides of which two are longer than the others.

A pair of additional layout elements 508 and 510 have been formedrelative to principal element 506, and not relative to principal element504. The additional layout elements are only along the longer of theprominent sides of layout element 506 in the shown aspect of theinvention. It is to be understood, however, that the additional layoutelements could also be, and/or alternatively be, provided along one orboth of the shorter sides of rectangular element 506. In the shownembodiment, additional layout elements 508 and 510 are formed along bothof the longer sides of rectangular element 506, but it is to beunderstood that the invention encompasses other embodiments in whichlayout elements are provided along only one of the longer sides of arectangular principal element, or all around the principal element.

The additional layout elements 508 and 510 are preferably provided closeenough to principal element 506 so that taped patterns resulting fromelements 508 and 510 will not ultimately print separate and discretefeatures on a radiation-sensitive material, but rather will modify animage printed from a taped pattern corresponding to element 506. Sinceelements 506, 508 and 510 together define a common image formed during aprinting process (rather than discrete images) the elements 506, 508 and510 can together be considered to correspond to the printed feature.Accordingly, whereas the pattern resulting after optical proximitycorrection had a pair of principal elements (504 and 506) which wereidentical to one another, and which corresponded to features desired toprint identically to one another; methodology of the present inventionhas asymmetrically modified the elements corresponding to the desiredidentical features. Specifically, one of the elements (504) is notmodified, and the other element (506) is modified by combiningadditional elements 508 and 510 with the element 506 to alter an imageprinted by element 506. Preferably, the asymmetric alteration of thehorizontally-extending element 506 relative to the vertically-extendingelement 504 causes features printed from the elements to be more similarto one another that the features would be in the absence of theasymmetric modification. The improved similarity can occur as a resultof the asymmetric modification compensating for asymmetric influencesthat occur during a printing process. For instance, the asymmetricmodification can compensate for various asymmetric influences onradiation utilized during a printing process (such as, for example,astigmatism and asymmetric depth of focus), and can compensate forasymmetric variations in a radiation-sensitive material during aprinting process. Although the described improvement in similarity isachieved through utilization of the elements in an asymmetricmodification, it should be understood that in some situations theimprovement in similarity can be achieved through utilization of theelements in a symmetric modification.

FIG. 19 illustrates a structure 530 similar to the structure 500discussed above with reference to FIG. 18. Structure 530 is a model of adataset, and comprises a substrate 502 having elements 504 and 506associated therewith. Structure 530 also comprises additional elements532, 534, 536, 538 and 540 extending proximate one of the long sides ofsubstantially rectangular principal element 506. Structure 530 is shownat a processing stage in which additional elements are added to adataset resulting from optical proximity correction (a processing stageafter step 402 of FIG. 15), but prior to taping a pattern defined by thedataset onto a reticle. The additional elements 532, 534, 536, 538 and540 are provided relative to principal element 506 but not relative toprincipal element 504, or in other words are provided asymmetricallyrelative to the elements 506 and 504. The additional elements 532, 534,536, 538 and 540 can be utilized similarly to the elements 508 and 510described with reference to FIG. 18 for compensating for asymmetriceffects occurring during a printing process.

The additional elements shown in FIGS. 18 and 19 can be provided withidentical radiation-influencing characteristics as the principalelements. Accordingly, the additional elements can be taped to a reticleto form regions having the same effect on transmission and phase, forexample, as do taped regions corresponding to patterns 504 and 506.Alternatively, one or more of the additional elements can be utilized totape a region onto a reticle which will have a different effect onradiation than do regions 504 and 506, such as, for example, a differenttransmission relative to the radiation, or a different effect on phaseof radiation passing through the region.

The methods described with reference to the flow charts of FIGS. 8 and15 can be combined. FIG. 20 shows a flow chart 600 illustrating acombination of processing steps from the methods of FIGS. 8 and 15. Thevarious process steps of FIG. 20 are labeled with identical numbering aswas utilized above with reference to FIGS. 8 and 15.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1-52. (canceled).
 53. A method of forming a patterned reticle,comprising: providing a design which is ultimately to be printed inradiation-sensitive material utilizing the patterned reticle, the designhaving at least two features which are at different locations butotherwise desired to be identical in printed dimension to one another;utilizing a first set of design rules to develop an approximation of apattern layout for the patterned reticle, the approximation comprising afirst set of layout elements, the layout elements within theapproximation for the at least two features being identical to oneanother; adding additional layout elements to the approximation to forman adjusted approximation of the pattern layout, the additional layoutelements being asymmetric relative to the at least two features so thatthe layout elements within the adjusted approximation for the at leasttwo features are not identical to one another; performing an opticalproximity correction on the adjusted approximation of the pattern layoutto form a pattern layout dataset; and utilizing the pattern layoutdataset either directly or with modification to tape an arrangement ontoa reticle to form the patterned reticle; the patterned reticleultimately producing the at least two features of the design moresimilar to each other than it would if the additional layout elementshad not been present during the optical proximity correction.
 54. Themethod of claim 53 wherein the pattern layout dataset is utilizeddirectly to tape the arrangement onto the reticle.
 55. The method ofclaim 53 wherein the pattern layout dataset is utilized withmodification to tape the arrangement onto the reticle; and wherein themodification includes addition of one or more elements which willinfluence a pattern of radiation generated by the radiation passingthrough a portion of the arrangement derived from the optical proximitycorrected adjusted approximation.
 56. The method of claim 53 wherein oneof the at least two features is ultimately to be printed to extendthrough a thicker region of the radiation-sensitive material thananother of the at least two features; and wherein the adjustment to theapproximation adjusts for the additional thickness ofradiation-sensitive material that said one of the features will extendthrough.
 57. The method of claim 53 wherein a location in theradiation-sensitive material printed one of the at least two features isexpected to have a different attribute than a location in theradiation-sensitive material printed with another of the at least twofeatures; and wherein the adjustment to the approximation adjusts forthe expected different attribute.
 58. The method of claim 53 wherein theradiation ultimately passing through the patterned reticle is expectedto have an aberration; and wherein the adjustment to the approximationadjusts for the expected aberration.
 59. The method of claim 53 whereinthe radiation ultimately passing through the patterned reticle will haveastigmatism; and wherein the adjustment to the approximation adjusts forthe astigmatism.
 60. The method of claim 53 wherein the radiationultimately passing through the patterned reticle will have varying focalpoints; and wherein the adjustment to the approximation adjusts for thevarying focal points.
 61. The method of claim 53 wherein the additionallayout elements remain in the plan dataset as the plan dataset isutilized to tape the arrangement onto the reticle.
 62. The method ofclaim 61 wherein the taped additional layout elements are identical tothe additional layout elements that had been added to the approximation.63. The method of claim 61 wherein the taped additional layout elementscorrespond to optically corrected versions of the additional layoutelements that had been added to the approximation.
 64. The method ofclaim 53 further comprising removing the additional layout elementsprior to utilizing the plan dataset to tape the arrangement onto thereticle.
 65. The method of claim 64 wherein the removed additionallayout elements are identical to the additional layout elements that hadbeen added to the approximation.
 66. The method of claim 64 wherein theremoved additional layout elements correspond to optically correctedversions of the additional layout elements that had been added to theapproximation. 67-94. (canceled).